拉斯维加斯9888
Product Center加热盘
|
Process |
Material |
Temperature |
Temp Uniform |
Size |
Temperature Test Conditions |
|
键合 |
SUS |
450-500℃ |
200℃＜±1℃ 200℃-500℃＜±1% |
8“ |
TC wafer |
|
Process |
Material |
Temperature |
Temp Uniform |
Size |
Temperature Test Conditions |
|
键合 |
SUS |
450-500℃ |
200℃＜±1℃ 200℃-500℃＜±1% |
8“ |
TC wafer |
|
Process |
Material |
Temperature |
Temp Uniform |
Size |
Temperature Test Conditions |
|
键合 |
SUS |
450-500℃ |
200℃＜±1℃ 200℃-500℃＜±1% |
8“ |
TC wafer |
|
Process |
Material |
Temperature |
Temp Uniform |
Size |
Temperature Test Conditions |
|
键合 |
SUS |
450-500℃ |
200℃＜±1℃ 200℃-500℃＜±1% |
8“ |
TC wafer |
12“水冷盘
|
|
|
|
|
氦检 |
1.2*10-9 |
|
水路加水压力测试 |
8Bar>12H |
|
镀镍 |
镀层厚度 25.4um 到38.1um |
|
热电偶 |
K型 |
|
配备公头连接器 ，出线长度3M |
8”550°键合盘下盘
|
|
|
Electrical |
Insulating Resistance |
14.98GΩ |
|
Heater Resistance |
9.3Ω/9.3Ω |
|
|
Heating |
Voltage withstand test |
1000V,5mA,60s |
|
Temp. Uniformity |
2.45% |
|
|
升温速率 |
72.55°/min |
|
|
冷却速率 |
16.24°/min |
|
Pres(mTorr) |
Set |
Tempeature for T/C Wafer Zone |
Temp. Profile |
||||||||||||||||
|
Temperature |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
9 |
10 |
11 |
12 |
13 |
14 |
15 |
16 |
17 |
Uniformity |
|
|
400℃ |
392.25 |
391.80 |
393.05 |
396.35 |
399.15 |
395.40 |
394.85 |
393.60 |
391.65 |
391.10 |
391.35 |
395.40 |
394.90 |
390.50 |
387.85 |
386.70 |
385.25 |
||
|
18 |
19 |
20 |
21 |
22 |
23 |
24 |
25 |
26 |
27 |
28 |
29 |
30 |
AVG |
MAX |
MIN |
∆T |
|||
|
387.80 |
383.50 |
381.70 |
380.05 |
384.50 |
385.00 |
382.30 |
382.00 |
/ |
/ |
/ |
/ |
/ |
389.52 |
399.15 |
380.05 |
19.10 |
2.45% |
||
|
Press(mTorr) |
Set |
Tempeature for T/C Wafer Zone |
Temp. Profile |
||||||||||||||||
|
Temperature |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
9 |
10 |
11 |
Uniformity |
|||||||
|
550℃ |
540.10 |
534.20 |
553.50 |
539.40 |
534.60 |
540.87 |
552.60 |
539.40 |
545.20 |
547.00 |
547.80 |
||||||||
|
12 |
13 |
14 |
15 |
16 |
17 |
18 |
AVG |
MAX |
MIN |
∆T |
|||||||||
|
552.90 |
536.30 |
532.50 |
531.50 |
540.90 |
540.90 |
/ |
541.75 |
553.50 |
531.50 |
22.00 |
2.03% |
||||||||
8”550°键合盘上盘
|
Electrical |
Insulating Resistance |
25GΩ |
25GΩ |
|
Heater Resistance |
13.5Ω/13.7Ω |
13.5Ω/13.7Ω |
|
|
Heating |
Voltage withstand test |
1000V,5mA,60s |
OK |
|
Temp. Uniformity |
2.13% |
2.13% |
|
|
升温速率 |
70°/min |
70°/min |
|
|
冷却速率 |
20°/min |
20°/min |
|
Press(mTorr) |
Set |
Tempeature for T/C Wafer Zone |
Temp. Profile |
||||||||||||||||
|
Temperature |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
9 |
10 |
11 |
12 |
13 |
14 |
15 |
16 |
17 |
Uniformity |
|
|
400℃ |
411.40 |
411.10 |
408.55 |
410.85 |
411.90 |
410.20 |
410.30 |
411.35 |
409.00 |
409.80 |
406.90 |
407.95 |
404.25 |
405.15 |
407.75 |
408.80 |
408.60 |
||
|
18 |
19 |
20 |
21 |
22 |
23 |
24 |
25 |
26 |
27 |
28 |
29 |
30 |
AVG |
MAX |
MIN |
∆T |
|||
|
409.00 |
404.25 |
403.00 |
394.75 |
400.95 |
404.35 |
407.55 |
405.55 |
/ |
/ |
/ |
/ |
/ |
407.33 |
411.90 |
394.75 |
17.15 |
2.13% |
||
|
Press(mTorr) |
Set |
Tempeature for T/C Wafer Zone |
Temp. Profile |
||||||||||||||||
|
Temperature |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
9 |
10 |
11 |
Uniformity |
|||||||
|
550℃ |
543.90 |
537.60 |
538.30 |
549.80 |
554.00 |
554.10 |
545.30 |
552.50 |
553.70 |
547.00 |
558.00 |
||||||||
|
12 |
13 |
14 |
15 |
16 |
17 |
18 |
AVG |
MAX |
MIN |
∆T |
|||||||||
|
547.80 |
542.90 |
549.50 |
554.80 |
553.60 |
543.60 |
/ |
548.61 |
558.00 |
537.60 |
20.40 |
1.86% |
||||||||
